丝印：TPH6R30ANL；Package：SOP；MOSFETs Silicon N-channel MOS

Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers Features (1) High-speed switching (2) Small gate charge : QSW = 14 nC (typ.) (3) Small output charge : Qoss = 46 nC (typ.) (4) Low drain-source on-resistance : RDS(ON) = 5.1 mΩ (typ.) (VGS = 10

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Power MOSFET (N-ch single 60V VDSS 150V)

Application Scope：High efficiency DC/DC converters / Switching regulators\nPolarity：N-ch\nGeneration：U-MOSⅧ-H\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：马来西亚 Drain current ID 66 A \nPower Dissipation PD 54 W \nDrain-Source voltage VDSS 100 V ;

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Silicon N-channel MOS (U-MOS-H)

1. Applications • Automotive • Motor Drivers • Switching Voltage Regulators 2. Features (1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 5.3 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 μA (max) (VDS = 100 V) (5) Enhancement mode:

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Silicon N-channel MOS (U-MOS-H)

1. Applications • Automotive • Motor Drivers • Switching Voltage Regulators 2. Features (1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 5.3 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 μA (max) (VDS = 100 V) (5) Enhancement mode:

文件：633.11 Kbytes 页数：12 Pages

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