XPW6R30ANB

Silicon N-channel MOS (U-MOS-H)

1.Applications •Automotive •MotorDrivers •SwitchingVoltageRegulators 2.Features (1)AEC-Q101qualified (2)Small,thinpackage (3)Lowdrain-sourceon-resistance:RDS(ON)=5.3mΩ(typ.)(VGS=10V) (4)Lowleakagecurrent:IDSS=10μA(max)(VDS=100V) (5)Enhancementmode:

6R30AXB

Insulatorbasetemperaturerating:-40°C/Fto150°C(302°F)ULRTI

6R30AXSP

Flammabilityratingofinsulatorbase:UL94V-0

D6R30

SPSTMomentaryKeySwitches

D6R30HT

SPSTMomentaryKeySwitches

TPH6R30ANL

MOSFETsSiliconN-channelMOS

Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators •MotorDrivers Features (1)High-speedswitching (2)Smallgatecharge:QSW=14nC(typ.) (3)Smalloutputcharge:Qoss=46nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=5.1mΩ(typ.)(VGS=10

XPH6R30ANB

SiliconN-channelMOS(U-MOS-H)

1.Applications •Automotive •MotorDrivers •SwitchingVoltageRegulators 2.Features (1)AEC-Q101qualified (2)Small,thinpackage (3)Lowdrain-sourceon-resistance:RDS(ON)=5.3mΩ(typ.)(VGS=10V) (4)Lowleakagecurrent:IDSS=10μA(max)(VDS=100V) (5)Enhancementmode: