Silicon N-channel MOS (U-MOS-H)

1. Applications • Automotive • Motor Drivers • Switching Voltage Regulators 2. Features (1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 5.3 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 μA (max) (VDS = 100 V) (5) Enhancement mode:

文件：544.91 Kbytes 页数：10 Pages

TOSHIBA

东芝

Power MOSFET (N-ch single 60V

Application Scope：DC-DC Converters / Automotive / Switching Voltage Regulators / Motor Drivers\nPolarity：N-ch\nGeneration：U-MOSⅧ-H\nInternal Connection：Single\nAEC-Q101：Qualified\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Drain-Source voltage VDSS 100 V \nGate-Source voltage VGSS +/-20 V \nDrain current ID 45 A \nPower Dissipation PD 132 W ;

Toshiba

东芝

Silicon N-channel MOS (U-MOS-H)

1. Applications • Automotive • Motor Drivers • Switching Voltage Regulators 2. Features (1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 5.3 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 μA (max) (VDS = 100 V) (5) Enhancement mode:

文件：633.11 Kbytes 页数：12 Pages

TOSHIBA

东芝

Insulator base temperature rating: -40°C/F to 150°C (302°F) UL RTI

文件：178.67 Kbytes 页数：3 Pages

MARATHON

Flammability rating of insulator base: UL 94 V-0

文件：145.91 Kbytes 页数：3 Pages

MARATHON

SPST Momentary Key Switches

文件：102.78 Kbytes 页数：4 Pages

ITT