丝印：TPH1R712MD；Package：SOP；MOSFETs Silicon P-Channel MOS

Applications • Lithium-Ion Secondary Batteries • Power Management Switches Features (1) Low drain-source on-resistance: RDS(ON) = 1.35 mΩ (typ.) (VGS = -4.5 V) (2) Low leakage current: IDSS = -10 μA (max) (VDS = -20 V) (3) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -1.0 mA)

文件：806.9 Kbytes 页数：9 Pages

TOSHIBA

东芝

丝印：TPH1R712MD；Package：SOP；MOSFETs Silicon P-Channel MOS

Applications • Lithium-Ion Secondary Batteries • Power Management Switches Features (1) Low drain-source on-resistance: RDS(ON) = 1.35 mΩ (typ.) (VGS = -4.5 V) (2) Low leakage current: IDSS = -10 μA (max) (VDS = -20 V) (3) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -1.0 mA)

文件：806.9 Kbytes 页数：9 Pages

TOSHIBA

东芝