TPH1R712MD芯片代码丝印对应型号-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
TPH1R712MD	文件：806.9 Kbytes Page：9 Pages	丝印：TPH1R712MD；Package：SOP；MOSFETs Silicon P-Channel MOS Applications • Lithium-Ion Secondary Batteries • Power Management Switches Features (1) Low drain-source on-resistance: RDS(ON) = 1.35 mΩ (typ.) (VGS = -4.5 V) (2) Low leakage current: IDSS = -10 μA (max) (VDS = -20 V) (3) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -1.0 mA) 文件：806.9 Kbytes 页数：9 Pages	TOSHIBA 东芝	TOSHIBA
TPH1R712MD	文件：806.9 Kbytes Page：9 Pages	丝印：TPH1R712MD；Package：SOP；MOSFETs Silicon P-Channel MOS Applications • Lithium-Ion Secondary Batteries • Power Management Switches Features (1) Low drain-source on-resistance: RDS(ON) = 1.35 mΩ (typ.) (VGS = -4.5 V) (2) Low leakage current: IDSS = -10 μA (max) (VDS = -20 V) (3) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -1.0 mA) 文件：806.9 Kbytes 页数：9 Pages	TOSHIBA 东芝	TOSHIBA

更多TPH1R712MD供应商更新时间2025-9-14 17:01:00