TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)

Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 4.5mΩ (typ.) • High forward transfer admittance: |Yfs| = 60S (typ.) • Low leakage current: IDSS = −10 µA (max

文件：182.48 Kbytes 页数：4 Pages

TOSHIBA

东芝

Lithium Ion Battery Applications Notebook pc Applications Notebook PC Applications Portable Equipment Applications

文件：295.69 Kbytes 页数：7 Pages

TOSHIBA

东芝

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)

Toshiba

东芝

Lithium Ion Battery Applications Notebook pc Applications Notebook PC Applications Portable Equipment Applications

文件：295.69 Kbytes 页数：7 Pages

TOSHIBA

东芝

P-Channel 30-V (D-S) MOSFET

文件：1.09067 Mbytes 页数：8 Pages

VBSEMI

微碧半导体