Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Lithium Ion Battery Applications Power Management Switch Applications

文件：247.14 Kbytes 页数：7 Pages

TOSHIBA

东芝

Power MOSFET (P-ch single)

Application Scope：Lithium-Ion secondary batteries / Power management switches\nPolarity：P-ch\nGeneration：U-MOSⅥ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：马来西亚 Drain current ID -34 A \nPower Dissipation PD 45 W \nDrain-Source voltage VDSS -30 V \nGate-Source voltage VGSS -25/+20 V ;

Toshiba

东芝

SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES

DESCRIPTION The PPC8128TA, PPC8151TA and PPC8152TA are silicon monolithic integrated circuits designed as buffer amplifiers for cellular / cordless telephones. These amplifiers can realize low current consumption with external chip inductor (example: 1005 size) which can not be realized on intern

文件：138.91 Kbytes 页数：16 Pages

NEC

瑞萨

BIPOLAR ANALOG INTEGRATED CIRCUITS

FEATURES • Low current consumption : UPC8128TA ; ICC = 2.8 mA TYP. @ VCC = 3.0 V UPC8151TA ; ICC = 4.2 mA TYP. @ VCC = 3.0 V UPC8152TA ; ICC = 5.6 mA TYP. @ VCC = 3.0 V • Supply voltage : VCC = 2.4 to 3.3 V • High efficiency : UPC8128TA ; PO (1 dB) = -4.0 dBm TYP. @ f = 1 GHz UPC8151TA ; PO

文件：448.08 Kbytes 页数：54 Pages

RENESAS

瑞萨

SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

DESCRIPTION The µPC8179TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can not be realized on internal 50 Ω wideband matched IC. This low current amplifier operates on 3.0

文件：154.32 Kbytes 页数：7 Pages

NEC

瑞萨