Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets

文件：238.91 Kbytes 页数：9 Pages

TOSHIBA

东芝

Power MOSFET (N-ch single VDSS 30V)

Application Scope：Mobile equipments / Notebook PCs\nPolarity：N-ch\nGeneration：U-MOSⅦ-H\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中国 / 马来西亚 Drain current ID 28 A \nPower Dissipation PD 42 W \nDrain-Source voltage VDSS 30 V \nGate-Source voltage VGSS +/-20 V ;

Toshiba

东芝

N-Channel MOSFET uses advanced trench SGT to minimize on-state resistance

文件：2.054969 Mbytes 页数：5 Pages

DOINGTER

杜因特

2.5Gb/s 16-Bit Multiplexer/Demultiplexer Chipset

Functional Description The VSC8061 and VSC8062 are high-speed interface devices capable of data rates up to 2.5Gb/s. The devices are fabricated in gallium arsenide using the Vitesse H-GaAs E/D MESFET process to achieve high speed and low power dissipation. For ease of system design using these p

文件：684.1 Kbytes 页数：20 Pages

VITESSE

2.5Gb/s 16-Bit Multiplexer/Demultiplexer Chipset

Functional Description The VSC8061 and VSC8062 are high-speed interface devices capable of data rates up to 2.5Gb/s. The devices are fabricated in gallium arsenide using the Vitesse H-GaAs E/D MESFET process to achieve high speed and low power dissipation. For ease of system design using these p

文件：684.1 Kbytes 页数：20 Pages

VITESSE