TPC8224-H

Power MOSFET (N-ch dual); Drain current (Q1) ID 8 A \nDrain current (Q2) ID 8 A \nPower Dissipation PD 1.5 W \nDrain-Source voltage (Q1) VDSS 30 V \nDrain-Source voltage (Q2) VDSS 30 V \nGate-Source voltage (Q1) VGSS +/-20 V \nGate-Source voltage (Q2) VGSS +/-20 V \n;

Application Scope：Mobile equipments / Notebook PCs\nPolarity：N-ch×2\nGeneration：U-MOSⅦ-H\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中国\n

TPC8224-H

Dual N-Channel 30-V (D-S) MOSFET

TPC8224-H

Dual N-Channel MOSFET uses advanced trench technology

VSC8224

QuadPort10/100/1000BASE-Tand1000BASE-XPHYwithRGMIIandRTBIMACInterfaces

GENERALDESCRIPTION TheVSC8224istheindustry’ssmallest,lowestpowerquadportGigabitEthernettransceiverandisidealformulti-portswitchandrouterapplications.In1000BASE-Tmode,theVSC8224’spowerconsumptionis30lowerthanthenextbestcompetitor.InRGMII-to-SerDesapplication

VSC8224HG

QuadPort10/100/1000BASE-Tand1000BASE-XPHYwithRGMIIandRTBIMACInterfaces

WM8224

60MSPS3-ChannelAFEwithMultipleDeviceOperationandProgrammableAutomaticBlackLevelCalibration