N-Channel 0-V (D-S) MOSFET

文件：1.00426 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel MOSFET uses advanced trench technology

文件：1.43682 Mbytes 页数：4 Pages

DOINGTER

杜因特

Power MOSFET (N-ch dual)

Application Scope：Mobile equipments / Notebook PCs\nPolarity：N-ch×2\nGeneration：U-MOSⅦ-H\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中国 Drain current (Q1) ID 9 A \nDrain current (Q2) ID 9 A \nPower Dissipation PD 1.5 W \nDrain-Source voltage (Q1) VDSS 30 V \nDrain-Source voltage (Q2) VDSS 30 V \nGate-Source voltage (Q1) VGSS +/-20 V \nGate-Source voltage (Q2) VGSS +/-20 V ;

Toshiba

东芝

Device Qualification

文件：580.76 Kbytes 页数：5 Pages

TriQuint

Multi-rate SONET/SDH, Fibre Channel, and Gigabit Ethernet CDR

GENERAL DESCRIPTION The VSC8222 and VSC8223 are high performance, multi-rate clock and data recovery ICs that support SONET/SDH systems operating at OC-48 (STM-16), OC-12 (STM-4), OC-3 (STM-1), Fibre Channel (1.0625 Gbps and 2.125 Gbps), Gigabit Ethernet (1.25 Gbps and 2.5 Gbps), and FEC data rat

文件：388.03 Kbytes 页数：2 Pages

VITESSE