Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Field Effect Transistor Silicon N-Channel MOS Type (U-MOS??H)

文件：225.9 Kbytes 页数：7 Pages

TOSHIBA

东芝

Power MOSFET (N-ch single VDSS 30V)

Application Scope：Mobile equipments / Notebook PCs\nPolarity：N-ch\nGeneration：U-MOSⅥ-H\nRoHS Compatible Product(s) (#)：Available Drain current ID 17 A \nPower Dissipation PD 1.9 W \nDrain-Source voltage VDSS 30 V ;

Toshiba

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

High-Speed, 8-Bit, Single-Chip Hmos Microcomputers

Description Features

文件：896.44 Kbytes 页数：13 Pages

NEC

瑞萨

38MHz-320MHz Low Phase Noise VCXO

文件：215.83 Kbytes 页数：10 Pages

ABRACON