7 SEGMENT LED DISPLAY

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ETCList of Unclassifed Manufacturers

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Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)

Notebook PC Applications Portable Equipment Applications • Low drain-source ON resistance: RDS (ON) = 24 mΩ (typ.) • High forward transfer admittance: |Yfs| = 14 S (typ.) • Low leakage current: IDSS = −10 μA (max) (VDS = −20 V) • Enhancement mode: Vth = −0.5 to −1.2 V

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TOSHIBA

东芝

RF AMPLIFIER IC FOR 150 MHz TO 330 MHz PAGER SYSTEM

DESCRIPTION µPC8102T is a silicon monolisic integrated circuit designed as RF amplifier for 150 MHz to 330 MHz pager system. Due to 1 V supply voltage, this IC is suitable for low voltage pager system. The package is a 6 pin mini mold suitable for high-density surface mounting. This IC is manufa

文件：147.02 Kbytes 页数：20 Pages

NEC

瑞萨

RF AMPLIFIER IC FOR 150 MHz TO 330 MHz PAGER SYSTEM

DESCRIPTION µPC8102T is a silicon monolisic integrated circuit designed as RF amplifier for 150 MHz to 330 MHz pager system. Due to 1 V supply voltage, this IC is suitable for low voltage pager system. The package is a 6 pin mini mold suitable for high-density surface mounting. This IC is manufa

文件：147.02 Kbytes 页数：20 Pages

NEC

瑞萨