N-Channel Enhancement-Mode Vertical DMOS FET

Features • 2V Maximum Low Threshold • High Input Impedance • Low Input Capacitance • Fast Switching Speeds • Low On-Resistance • Free from Secondary Breakdown • Low Input and Output Leakage Applications • Logic-Level Interfaces (Ideal for TTL and CMOS) • Solid-State Relays • Battery-Ope

文件：1.18873 Mbytes 页数：20 Pages

Microchip

微芯科技

N-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

文件：461.12 Kbytes 页数：4 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FET

文件：926.36 Kbytes 页数：14 Pages

Microchip

微芯科技

MOSFET, N-Channel Enhancement-Mode, 400V, 5.0 Ohm

This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperat Low threshold (2.0V max.) \nHigh input impedance \nLow input capacitance \nFast switching speeds \nLow on-resistance \nFree from secondary breakdown \nLow input and output leakage;

Microchip

微芯科技

N-Channel Enhancement-Mode Vertical DMOS FET

Features • 2V Maximum Low Threshold • High Input Impedance • Low Input Capacitance • Fast Switching Speeds • Low On-Resistance • Free from Secondary Breakdown • Low Input and Output Leakage Applications • Logic-Level Interfaces (Ideal for TTL and CMOS) • Solid-State Relays • Battery-Ope

文件：1.18873 Mbytes 页数：20 Pages

Microchip

微芯科技

N-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

文件：461.12 Kbytes 页数：4 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FET

Features • 2V Maximum Low Threshold • High Input Impedance • Low Input Capacitance • Fast Switching Speeds • Low On-Resistance • Free from Secondary Breakdown • Low Input and Output Leakage Applications • Logic-Level Interfaces (Ideal for TTL and CMOS) • Solid-State Relays • Battery-Ope

文件：1.18873 Mbytes 页数：20 Pages

Microchip

微芯科技

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high inpu

文件：738.92 Kbytes 页数：8 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

文件：461.12 Kbytes 页数：4 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high inpu

文件：738.92 Kbytes 页数：8 Pages

SUTEX