N-Channel Enhancement-Mode Vertical DMOS FET

Features • 2V Maximum Low Threshold • High Input Impedance • Low Input Capacitance • Fast Switching Speeds • Low On-Resistance • Free from Secondary Breakdown • Low Input and Output Leakage Applications • Logic-Level Interfaces (Ideal for TTL and CMOS) • Solid-State Relays • Battery-Ope

文件：1.18873 Mbytes 页数：20 Pages

Microchip

微芯科技

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high inpu

文件：738.92 Kbytes 页数：8 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FET

文件：926.36 Kbytes 页数：14 Pages

Microchip

微芯科技

N-Channel MOSFET uses advanced trench technology

文件：1.28086 Mbytes 页数：5 Pages

DOINGTER

杜因特

N-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

文件：461.12 Kbytes 页数：4 Pages

SUTEX