N-Channel Enhancement-Mode Vertical DMOS FET

General Description\nThis low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input imp ►Low threshold — 1.6V max.\n►High input impedance\n►Low input capacitance — 140pF typical\n►Fast switching speeds\n►Low on-resistance\n►Free from secondary breakdown\n►Low input and output leakage\n►Complementary N- and P-channel devicesApplications\n►Logic level interfaces – ideal for TTL and CMOS\;

Microchip

微芯科技