AOD496

iscN-ChannelMOSFETTransistor

•FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤9.5mΩ •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •BesuitableforuseasahighsideswitchinSMPSand generalpurposeapplications.

AOD496

N-ChannelEnhancementModeFieldEffectTransistor

AOD496A

30VN-ChannelMOSFET

AOD496A

N-ChannelEnhancementModeFieldEffectTransistor

AOD496A

iscN-ChannelMOSFETTransistor

DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=57A@TC=25℃ •DrainSourceVoltage- :VDSS=30V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=9mΩ(Max) •100avalanchetested •MinimumLot-to-Lot

AOD496A

N-ChannelMOSFETusesadvancedtrenchtechnology

Description： ThisN-ChannelMOSFETusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(on)withlowgatecharge.Itcanbeusedinawidevarietyofapplications. Features： 1)VDS=30V,ID=55A,RDS(ON)

AOI496

N-Channel30-V(D-S)MOSFET

AOI496

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=53A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=70mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

AOI496A

N-Channel30-V(D-S)MOSFET

AOI496A

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=53A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=70mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC