Silicon NPN Power Transistors

DESCRIPTION • Excellent Safe Operating Area • DC Current Gain- : hFE=20-70@IC = 4A • Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A • Complement to Type TIP2955 APPLICATIONS • Designed for general-purpose switching and amplifier applications.

文件：155.45 Kbytes 页数：4 Pages

ISC

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Complementary Power Transistor

Description: Complementary Silicon Power Transistors are designed for use in general purpose power amplifier and switching applications. Features: • Power Dissipation-PD = 90W at TC = 25°C • • DC Current Gain hFE = 20 ~ 100 at IC = 4A • • VCE(sat) = 1.1V (Max.) at IC = 4A, IB = 400mA

文件：478.87 Kbytes 页数：4 Pages

MULTICOMP

易络盟

SILICON POWER TRANSISTORS

PNP TIP2955 NPN TIP3055 The TIP3055 is a NPN epitaxial-base transistor in TO3PN package.It is intended for power switching circuits, series and shunt regulators, output stage and hi-fi amplifiers. The complementary is the TIP2955 For PNP types Voltage and Curent are Negative. Compliance to

文件：72.47 Kbytes 页数：3 Pages

COMSET

TO-3P Fully Isolated Plastic Package Transistor CDIL

TO-3P Fully Isolated Plastic Package Transistor CDIL

文件：89.12 Kbytes 页数：2 Pages

CDIL

Complementary Silicon Power Transistors

15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS, 90 WATTS • DC Current Gain − hFE = 20-70 @ IC= 4.0 Adc • Collector−Emitter Saturation Voltage − VCE(sat) = 1.1 Vdc (Max) @ IC= 4.0 Adc • Excellent Safe Operating Area • These are Pb−Free Devices*

文件：114.97 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Complementary Silicon Power Transistors

15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS, 90 WATTS • DC Current Gain − hFE = 20-70 @ IC= 4.0 Adc • Collector−Emitter Saturation Voltage − VCE(sat) = 1.1 Vdc (Max) @ IC= 4.0 Adc • Excellent Safe Operating Area • These are Pb−Free Devices*

文件：114.97 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

TO-3P Fully Isolated Plastic Package Transistor CDIL

TO-3P Fully Isolated Plastic Package Transistor CDIL

文件：89.12 Kbytes 页数：2 Pages

CDIL

isc Silicon NPN Power Transistor

DESCRIPTION • Excellent Safe Operating Area • DC Current Gain- : hFE=20-70@IC = 4A • Collector-Emitter Saturation Voltage- : VCE(sat)= 0.8V(Max)@ IC = 4A • Complement to Type TIP2955T APPLICATIONS • Designed for general-purpose switching and amplifier applications.

文件：148.75 Kbytes 页数：2 Pages

ISC

无锡固电

COMPLEMENTARY SILICON EPITAXIAL-BASE POWER TRANSISTORS

COMPLEMENTARY SILICON EPITAXIAL-BASE POWER TRANSISTORS THE TIP29 SERIES (NPN) AND TIP30 SERIES (PNP) ARE COMPLEMENTARY SILICON EPITAXIAL BASE POWER TRANSISTORS DESIGNED FOR POWER AMPLIFIERS AND SWITCHING APPLICATIONS.

文件：56.36 Kbytes 页数：1 Pages

MICRO-ELECTRONICS

Silicon PNP Power Transistors

DESCRIPTION • With TO-220C package • Complement to type TIP29/29A/29B/29C APPLICATIONS • For use in general purpose power amplifer and switching applications

文件：133.06 Kbytes 页数：3 Pages

ISC

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