Silicon NPN Power Transistors

Silicon NPN Power Transistors

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KISEMICONDUCTOR

Complementary Silicon High Power Ttransistors

PNP TIP2955 NPN TIP3055 DESCRIPTION The TIP3055 is a silicon Epitaxial-Base Planar NPN transistor mountend in TO-247 plastic package. It is intented for power switching circuits, series and shunt regulators, output stages and hi-fi amplifiers. The complementary PNP type is the TIP295

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TGS

NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)

AUDIO POWER AMPLIFIER DC TO DC CONVERTER High Current Capability High Power Dissipation Complementary to TIP2955

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WINGS

永盛电子

NPN SILICON POWER TRANSISTOR

● Designed for Complementary Use with the TIP2955 Series ● 90 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● Customer-Specified Selections Available Collector-base voltage (IE = 0) VCBO 100 V Collector-emitter voltage (IB = 0) (see Note 1) VCER 70 V Emitter-base voltage VEB

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POINN

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PN package ·Complement to type TIP2955 ·90 W at 25°C case temperature ·15 A continuous collector current APPLICATIONS ·Designed for general–purpose switching and amplifier applications.

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SAVANTIC

Silicon NPN Power Transistor

DESCRIPTION • Excellent Safe Operating Area • DC Current Gain- : hFE=20-70@IC = 4A • Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A • Complement to Type TIP2955 APPLICATIONS • Designed for general-purpose switching and amplifier applications.

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

POWER TRANSISTORS COMPLEMENTARY SILICON

15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS, 90 WATTS • DC Current Gain − hFE = 20-70 @ IC= 4.0 Adc • Collector−Emitter Saturation Voltage − VCE(sat) = 1.1 Vdc (Max) @ IC= 4.0 Adc • Excellent Safe Operating Area • These are Pb−Free Devices*

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ONSEMI

安森美半导体

Complementary Silicon Power Transistors

15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS, 90 WATTS • DC Current Gain − hFE = 20-70 @ IC= 4.0 Adc • Collector−Emitter Saturation Voltage − VCE(sat) = 1.1 Vdc (Max) @ IC= 4.0 Adc • Excellent Safe Operating Area • These are Pb−Free Devices*

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ONSEMI

安森美半导体

POWER TRANSISTORS COMPLEMENTARY SILICON

TIP2955 PNP TIP3055 NPN 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 90 WATTS . . . designed for general–purpose switching and amplifier applications. • DC Current Gain — hFE = 20–70 @ IC = 4.0 Adc • Collector–Emitter Saturation Voltage — VCE(sat) = 1.1 Vdc (Max) @

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Motorola

摩托罗拉

POWER TRANSISTORS(15A,60V,90W)

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS 90 WATTS ..designed for use int general-purpose amplifier and switching application NPN -> TIP3055 PNP -> TIP2955

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MOSPEC

统懋