Monolithic Construction With Built In Base-Emitter Shunt Resistors

文件：98.96 Kbytes 页数：3 Pages

SYC

10 A，100 V，PNP 达林顿双极功率晶体管

The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low frequency switching applications. The TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) are complementary devices. • High DC Current Gain Min hFE = 1000 @ IC= 5 A, VCE = 4 V\n• Collector-Emitter Sustaining Voltage @ 30 mAVCEO(sus) = 60 Vdc (Min) TIP140, TIP145 VCEO(sus) = 80 Vdc (Min)TIP141, TIP146VCEO(sus) = 100 Vdc (Min)TIP142, TIP147\n• Monolithic Construction with Built-In Base-Emitter Shunt Resistor\n• Pb-F;

ONSEMI

安森美半导体

双极型晶体管/BJT-其他

JSMC

华微电子

达林顿管

JSCJ

长晶科技

Package：TO-218-3；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 100V 10A TO218

Central

Package：TO-247-3；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP DARL 100V 10A TO247-3

ONSEMI

安森美半导体

Package：TO-247-3；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP DARL 100V 10A TO247

STMICROELECTRONICS

意法半导体

SILICON PLANAR DARLINGTON POWER TRANSISTORS

SILICON PLANAR DARLINGTON POWER TRANSISTORS For use in Power Linear and Switching Applications

文件：60.02 Kbytes 页数：2 Pages

TEL

东电电子

Monolithic Construction With Built In Base- Emitter Shunt Resistors

Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = -4V, IC = -5A (Min.) • Industrial Use • Complement to TIP140F/141F/142F

文件：62.18 Kbytes 页数：4 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

PNP (HIGH DC CURRENT GAIN)

HIGH DC CURRENT GAIN MIN hFE=1000@ VCE = -4V, IC= -5A Monolithic Construction With Built In Base-Emitter Shunt Resistors Industrial Use Complement to TIP140F/141F/142F

文件：175.17 Kbytes 页数：4 Pages

Samsung

三星