NPN SILICON POWER DARLINGTONS

● Designed for Complementary Use with TIP145, TIP146 and TIP147 ● 125 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● Minimum hFE of 1000 at 4 V, 5 A

文件：139.77 Kbytes 页数：6 Pages

POINN

Silicon NPN Darlington Power Transistors

DESCRIPTION • With TO-3PN package • DARLINGTON • High DC current gain • Complement to type TIP145/146/147 APPLICATIONS • Designed for general–purpose amplifier and low frequency switching applications.

文件：165.83 Kbytes 页数：4 Pages

SAVANTIC

NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR(HIGH DC CURRENT GAIN)

HIGH DC CURRENT GAIN • Complementary to TIP145/146/147

文件：24.11 Kbytes 页数：2 Pages

WINGS

永盛电子

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

DESCRIPTION The TIP140, TIP141 and TIP142 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in TO-218 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are TIP145, TIP146 and TI

文件：48.21 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体

NPN SILICON POWER DARLINGTONS

文件：92.99 Kbytes 页数：4 Pages

Bourns

伯恩斯

Darlington Complementary Silicon Power Transistors

文件：91.24 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

10 A，80 V，NPN 达林顿双极功率晶体管

The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low frequency switching applications. The TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) are complementary devices. • High DC Current Gain Min hFE = 1000 @ IC= 5 A, VCE = 4 V\n• Collector-Emitter Sustaining Voltage @ 30 mAVCEO(sus) = 60 Vdc (Min) TIP140, TIP145 VCEO(sus) = 80 Vdc (Min)TIP141, TIP146VCEO(sus) = 100 Vdc (Min)TIP142, TIP147\n• Monolithic Construction with Built-In Base-Emitter Shunt Resistor\n• Pb-F;

ONSEMI

安森美半导体

Through-Hole Transistor-Bipolar Power (>1A) NPN Darlington

Central

Transistor

Comset

Package：TO-218-3；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 80V 10A TO218

Central