| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
TIP141 | POWER TRANSISTORS(10A,60-100V,125W)
| MOSPEC MOSPEC | MOSPEC | |
TIP141 | 10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS TIP140,TIP141,TIP142-->NPN TIP145,TIP146,TIP147--->PNP ...designedforgeneral–purposeamplifierandlowfrequencyswitchingapplications. •HighDCCurrentGain—MinhFE=1000@IC=5A,VCE=4V •Collector–EmitterSustainingVoltage—@30mA VCEO(sus)=60Vdc(Min)—TIP140, | MotorolaMotorola, Inc 摩托罗拉 | Motorola | |
TIP141 | DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS DarlingtonComplementarySiliconPowerTransistors Designedforgeneral−purposeamplifierandlowfrequencyswitchingapplications. Features •HighDCCurrentGain− MinhFE=1000@IC =5.0A,VCE=4V •Collector−EmitterSustainingVoltage−@30mA | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | |
TIP141 | NPN SILICON POWER DARLINGTONS ●DesignedforComplementaryUsewith TIP145,TIP146andTIP147 ●125Wat25°CCaseTemperature ●10AContinuousCollectorCurrent ●MinimumhFEof1000at4V,5A | POINNPower Innovations Ltd Power Innovations Ltd | POINN | |
TIP141 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS DESCRIPTION TheTIP140,TIP141andTIP142aresiliconepitaxial-baseNPNpowertransistorsinmonolithicDarlingtonconfigurationandaremountedinTO-218plasticpackage.Theyareintentedforuseinpowerlinearandswitchingapplications. ThecomplementaryPNPtypesareTIP145,TIP146andTI | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | |
TIP141 | Monolithic Construction With Built In Base- Emitter Shunt Resistors MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •HighDCCurrentGain:hFE=1000@VCE=4V,IC=5A(Min.) •IndustrialUse •ComplementtoTIP145/146/147 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | |
TIP141 | Silicon NPN Darlington Power Transistors DESCRIPTION •WithTO-3PNpackage •DARLINGTON •HighDCcurrentgain •ComplementtotypeTIP145/146/147 APPLICATIONS •Designedforgeneral–purposeamplifierandlowfrequencyswitchingapplications. | SAVANTIC Savantic, Inc. | SAVANTIC | |
TIP141 | isc Silicon NPN Darlington Power Transistor DESCRIPTION •HighDCCurrentGain- :hFE=1000(Min)@IC=5A •Collector-EmitterSustainingVoltage- :VCEO(SUS)=80V(Min) •ComplementtoTypeTIP146 APPLICATIONS •Designedforgeneralpurposeamplifierandlowfrequencyswitchingapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
TIP141 | SILICON POWER DARLINGTON COMPLEMENTARY TRANSISTORS TIP140TIP141TIP142-->NPN TIP145TIP146TIP147-->PNP DESCRIPTION: TheCENTRALSEMICONDUCTORTIP140,TIP145seriestypesareComplementarySiliconPowerDarlingtonTransistorsmanufacturedbytheepitaxialbaseprocess,designedforgeneralpurposeamplifierandlowspeedswitching | CentralCentral Semiconductor Corp 美国中央半导体 | Central | |
TIP141 | NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR(HIGH DC CURRENT GAIN) HIGHDCCURRENTGAIN •ComplementarytoTIP145/146/147 | WINGSWing Shing Computer Components Wing Shing Computer Components | WINGS | |
TIP141 | POWER DARLINGTONS DESCRIPTION TheTIP140,TIP141,TIP142aresiliconepitaxialbaseNPNtransistorsinmonolithicDarlingtonconfigurationandaremountedinSOT-93plasticpackage.Theyareintendedforuseinpowerlinearandswitchingapplications.ThecomplementaryPNPtypesaretheT1P145,TIP146,TIP147res | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | |
TIP141 | SILICON PLANAR DARLINGTON POWER TRANSISTORS DesignedforGeneralPurposeAmplifierandLowFrequencySwitchingApplications TO-3PNNonIsolated PlasticPackage | CDIL CDIL | CDIL | |
TIP141 | NPN SILICON DARLINGTONS, SILICON POWER TRANSISTORS NPNSILICONDARLINGTONS,SILICONPOWERTRANSISTORS Theyaresiliconepitaxial-baseNPNtransistorsinmonolithicDarlingtonconfigurationandare mountedinTO-3PNplasticpacktage. Theyareintendedforuseinpowerlinearandswitchingapplication. ThecomplementaryareTIP145,TIP146,TIP14 | COMSET Comset Semiconductor | COMSET | |
TIP141 | NPN SILICON POWER DARLINGTONS | BournsBourns Inc. 伯恩斯（邦士） | Bourns | |
TIP141 | Darlington Complementary Silicon Power Transistors | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | |
TIP141 | 包装：散装 封装/外壳：TO-218-3 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 80V 10A TO218 | CentralCentral Semiconductor Corp 美国中央半导体 | Central | |
TIP141 | 包装：剪切带（CT）带盒（TB） 封装/外壳：TO-218-3 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN DARL 80V 10A TO218 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | |
Monolithic Construction With Built In Base- Emitter Shunt Resistors MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •ComplementtoTIP145F/146F/147F •HighDCCurrentGain:hFE=1000@VCE=4V,IC=5A(Min.) •IndustrialUse | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
TO-3P Fully Isolated Plastic Package Transistor CDIL TO-3PFullyIsolatedPlasticPackageTransistorCDIL | CDIL CDIL | CDIL | ||
SILICON PLANAR DARLINGTON POWER TRANSISTORS SILICONPLANARDARLINGTONPOWERTRANSISTORS ForuseinPowerLinearandSwitchingApplications | TEL TRANSYS Electronics Limited | TEL |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
Si-N+Darl+Di
- 性质：
低频或音频放大 （LF）_开关管 （S）_功率放大 （L
- 封装形式：
直插封装
- 极限工作电压：
80V
- 最大电流允许值：
10A
- 最大工作频率：
<1MHZ或未知
- 引脚数：
3
- 可代换的型号：
BDX65A,BDV65A,BDV67,BDW83B,MJ3001,FH9C,
- 最大耗散功率：
125W
- 放大倍数：
β>1000
- 图片代号：
B-71
- vtest：
80
- htest：
999900
- atest：
10
- wtest：
125
产品属性
- 产品编号：
TIP141
- 制造商：
Central Semiconductor Corp
- 类别：
分立半导体产品 > 晶体管 - 双极性晶体管（BJT）- 单个
- 包装：
散装
- 晶体管类型：
NPN
- 不同 Ic、Vce 时 DC 电流增益 (hFE)（最小值）：
1000 @ 5A，4V
- 工作温度：
-65°C ~ 150°C（TJ）
- 安装类型：
通孔
- 封装/外壳：
TO-218-3
- 供应商器件封装：
TO-218
- 描述：
TRANS NPN 80V 10A TO218
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
24+ |
TO 220 |
155581 |
明嘉莱只做原装正品现货 |
询价 | ||
ST |
15+ |
TO-247 |
11560 |
全新原装,现货库存,长期供应 |
询价 | ||
ST |
23+ |
TO-3P |
18000 |
询价 | |||
MOT |
2017+ |
TO-3P |
25689 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
询价 | ||
TI |
05+ |
原厂原装 |
4703 |
只做全新原装真实现货供应 |
询价 | ||
TO-3PN |
10000 |
全新 |
询价 | ||||
MOT |
04+ |
TO-3P |
2890 |
全新原装进口自己库存优势 |
询价 | ||
ST |
23+ |
TO-3P |
5000 |
原装正品,假一罚十 |
询价 | ||
ST |
17+ |
TO-220 |
6200 |
询价 | |||
FAIRCHILD |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 |
