Package：TO-218-3；包装：剪切带（CT）带盒（TB） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN DARL 80V 10A TO218

STMICROELECTRONICS

意法半导体

SILICON PLANAR DARLINGTON POWER TRANSISTORS

SILICON PLANAR DARLINGTON POWER TRANSISTORS For use in Power Linear and Switching Applications

文件：60.02 Kbytes 页数：2 Pages

TEL

Monolithic Construction With Built In Base- Emitter Shunt Resistors

Monolithic Construction With Built In Base-Emitter Shunt Resistors • Complement to TIP145F/146F/147F • High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min.) • Industrial Use

文件：62.72 Kbytes 页数：4 Pages

Fairchild

仙童半导体

TO-3P Fully Isolated Plastic Package Transistor CDIL

TO-3P Fully Isolated Plastic Package Transistor CDIL

文件：89.12 Kbytes 页数：2 Pages

CDIL

SILICON PLANAR DARLINGTON POWER TRANSISTORS

Designed for General Purpose Amplifier and Low Frequency Switching Applications TO- 3PN Non Isolated Plastic Package

文件：327.1 Kbytes 页数：3 Pages

CDIL

POWER TRANSISTORS(10A,60-100V,80W)

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for general-purpose amplifier and low speed switching applications. 10 AMPERE DARLINGTIOON COM:EMEMTARY SILICON POWER TRANSISTORS 60 - 100 VOLTS 80 WATTS TIP140T,TIP141T,TIP142T -->NPN TIP145T,TIP146T,TIP147T ---> PNP

文件：204.61 Kbytes 页数：4 Pages

MOSPEC

统懋

NPN Epitaxial Silicon Darlington Transistor

Features • Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = 4V, lc = 5A (Min.) • Industrial Use • Complement to TIP145T/146T/147T

文件：69.96 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Darlington Power Transistor

Features • Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = 4V, lc = 5A (Min.) • Industrial Use • Complement to TIP145T/146T/147T

文件：79.49 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Monolithic Construction With Built In Base-Emitter Shunt Resistors

Monolithic Construction With Built In Base-Emitter Shunt Resistors - High DC Current Gain : hFE=1000 @ VCE= 2V, IC= 5A (Min.) - Collector-Emitter Sustaining Voltage - Low Collector-Emitter Saturation Voltage - Industrial Use - Complementary to TIP145/146/147

文件：571.15 Kbytes 页数：5 Pages

SEMIHOW

Monolithic Construction With Built In Base- Emitter Shunt Resistors

Features • Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min.) • Industrial Use • Complement to TIP145T/146T/147T

文件：52.75 Kbytes 页数：4 Pages

Fairchild

仙童半导体