NPN SILICON POWER DARLINGTONS

NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with TIP125, TIP126 and TIP127 ● 65 W at 25°C Case Temperature ● 5 A Continuous Collector Current ● Minimum hFE of 1000 at 3 V, 3 A

文件：157.56 Kbytes 页数：6 Pages

POINN

Silicon NPN Darlington Power Transistors

DESCRIPTION • With TO-220C package • DARLINGTON • High DC current gain • Low collector saturation voltage • Complement to type TIP125/126/127 APPLICATIONS • Designed for general–purpose amplifier and low–speed switching applications.

文件：127.43 Kbytes 页数：4 Pages

SAVANTIC

Monolithic Construction With Built In Base-Emitter Shunt Resistors

Monolithic Construction With Built In Base-Emitter Shunt Resistors - High DC Current Gain : hFE=1000 @ VCE= 4V, IC= 3A (Min.) - Collector-Emitter Sustaining Voltage - Low Collector-Emitter Saturation Voltage - Industrial Use - Complementary to TIP125/126/127

文件：501.58 Kbytes 页数：5 Pages

SEMIHOW

Darlington Power Transistors (NPN)

Features •Designed for general-purpose amplifier and low speed switching applications •RoHS Compliant

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TAITRON

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

DESCRIPTION The TIP122 are silicon Epitaxial-Base NPN power transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications.The complementary PNP types are TIP127 respectively.

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TGS

Darlington Transistors

[SGS] POWER DARLINGTONS The TIP120, TIP121 and TIP122 are silicon epitaxial-base NPN transistors in monolithic Darlington configuration in Jedec TO-220 plastic package, intended for use in power linear and switching applications. The complementary PNP types are the TIP125, TIP126 and TIP127 res

文件：403.23 Kbytes 页数：6 Pages

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NPN Transistor Bare Die

Features Collector current up to 5A Low VCE(sat) Very high hFE Solderable back metal High Reliability tested grades for Military + Space

文件：214.97 Kbytes 页数：2 Pages

SS

NPN Transistor Bare Die

Features Collector current up to 5A Low VCE(sat) Very high hFE Solderable back metal High Reliability tested grades for Military + Space

文件：210.49 Kbytes 页数：2 Pages

SS

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. Features ■ Low collector-emitter saturation voltage ■ Comp

文件：53.42 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体

Engine ignition

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JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

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