丝印：TIP120；Package：TO-220-3L；TO-220-3L Plastic-Encapsulate Transistors

FEATURES Medium Power Complementary Silicon Transistors

文件：1.78214 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：TIP120；Package：TO-220-3L；TO-220-3L Plastic-Encapsulate Transistors

FEATURES Medium Power Complementary Silicon Transistors

文件：1.78214 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

Motion Controller using Incremental Encoder

Application Information The TIP120 family of IndustryPack® compatible modules is designed for motion control applications using incremental encoders as position feedback. There are five versions available: The TIP120-1x is a one or two axes motion control IP based on the LM628 controller from Na

文件：92.63 Kbytes 页数：2 Pages

TEWS

Darlington Transistors

Features • Designed for general-purpose amplifier and low speed switching applications • Collector-emitter sustaining voltage - Vceo(sus) = 60V (minimum) - TIP120, TIP125 80V (minimum) - TIP121, TIP126 100V (minimum) - TIP122, TIP127 • Collector-emitter saturation voltage - Vce(sat) = 2V (max

文件：1.13386 Mbytes 页数：5 Pages

MULTICOMP

易络盟

ThinkiSemi mature NPN Epitaxial Darlington Transistor

Features ※ Complementary to TIP125/TIP126/TIP127 ※ Switching Times with Inductive Loads ※ Saturation Voltages ※ Leakage Currents ※ Fast Turn–Off Times Application ※ Medium Power Linear Switching Applications ※ AC and DC Motor Controls ※ Inverters,Solenoid and Relay Drivers Mechanical Dat

文件：636.29 Kbytes 页数：4 Pages

THINKISEMI

思祁半导体

POWER TRANSISTORS(5.0A,60-100V,65W)

... designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll

文件：206.87 Kbytes 页数：4 Pages

MOSPEC

统懋

DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12

文件：251.64 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

NPN SILICON POWER DARLINGTONS

NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with TIP125, TIP126 and TIP127 ● 65 W at 25°C Case Temperature ● 5 A Continuous Collector Current ● Minimum hFE of 1000 at 3 V, 3 A

文件：157.56 Kbytes 页数：6 Pages

POINN

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. Features ■ Low collector-emitter saturation voltage ■ Comp

文件：53.42 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体

NPN (MEDIUM POWER LINEAR SWITCHING APPLICATIONS)

MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Complementary to TIP125

文件：207.05 Kbytes 页数：6 Pages

SAMSUNG

三星