TO-220-3L Plastic-Encapsulate Transistors

FEATURES Medium Power Complementary Silicon Transistors

文件：1.98769 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

PNP Darlington Transistors

■ Features ● Collector Current Capability ICM=-8A ● Collector Emitter Voltage VCEO=-100V ● Medium Power Complementary Silicon Transistors

文件：4.64896 Mbytes 页数：2 Pages

TUOFENG

拓锋半导体

TIP127A PNP Epitaxial Silicon Transistor

MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Collector current 10A • Collector dissipation Pc = 75W (Tc = 25°C)

文件：107.48 Kbytes 页数：2 Pages

FCI

富加宜

Silicon PNP Darlington Power Transistors

Features • Mounting Torgue: 5 in-lbs Maximum • The complementary NPN types are the TIP121/2/3 respectively • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 •

文件：163.14 Kbytes 页数：2 Pages

MCC

NPN/PNP SILICON POWER DARLINGTON TRANSISTORS

NPN/PNP SILICON POWER DARLINGTON TRANSISTORS Designed for General-Purpose Amplifier and Low-Speed Switching Applications.

文件：213.99 Kbytes 页数：3 Pages

CDIL

NPN/PNP SILICON POWER DARLINGTON TRANSISTORS

NPN/PNP SILICON POWER DARLINGTON TRANSISTORS Designed for General-Purpose Amplifier and Low-Speed Switching Applications.

文件：138.01 Kbytes 页数：2 Pages

TEL

Darlington TRANSISTOR (NPN)

TIP120F,121F,122F Darlington TRANSISTOR (NPN) TIP125F,126F,127F Darlington TRANSISTOR (PNP) FEATURES Medium Power Complementary silicon transistors

文件：188.01 Kbytes 页数：2 Pages

FS

DARLINGTON TRANSISTOR (NPN)

TIP120F,121F,122F DARLINGTON TRANSISTOR (NPN) TIP125F,126F,127F DARLINGTON TRANSISTOR (PNP) FEATURES ● Medium Power Complementary Silicon Transistors

文件：1.8236 Mbytes 页数：3 Pages

JIANGSU

长电科技

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min.) ·High Reliability ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High ruggedness electronic ignitions ·High voltage ignition coil

文件：313.21 Kbytes 页数：3 Pages

ISC

无锡固电

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. Features ■ Low collector-emitter saturation voltage ■ Comp

文件：29.78 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体