NPN Plastic Medium-Power Silicon Transistors

Features • Mounting Torgue: 5 in-lbs Maximum • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix designates RoHS Compliant. See ordering information) • High DC Current Gain : hFE=2500 (Typ) @ IC=4.0Adc • Halogen free available upon request by adding suffix -HF • Low Collector-Emitter Saturati

文件：167.79 Kbytes 页数：4 Pages

MCC

PLASTIC POWER TRANSISTORS

PLASTIC POWER TRANSISTORS Intended for use in Linear Switching Applications

文件：320.51 Kbytes 页数：3 Pages

CDIL

PLASTIC POWER TRANSISTORS

PLASTIC POWER TRANSISTORS Intended for use in Linear Switching Applications

文件：320.51 Kbytes 页数：3 Pages

CDIL

NPN Plastic Medium-Power Silicon Transistors

Features • Mounting Torgue: 5 in-lbs Maximum • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix designates RoHS Compliant. See ordering information) • High DC Current Gain : hFE=2500 (Typ) @ IC=4.0Adc • Halogen free available upon request by adding suffix -HF • Low Collector-Emitter Saturati

文件：167.79 Kbytes 页数：4 Pages

MCC

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60– 80– 100 VOLTS 80 WATTS . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain —hFE= 2500 (Typ) @ IC= 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 30 mAdc

文件：218.99 Kbytes 页数：6 Pages

Motorola

摩托罗拉

POWER TRANSISTORS(8A,60-100V,80W)

8 Ampere DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 80 WATTS TIP100,TIP101,TIP102 --> NPN TIP105,TIP106,TIP107 --> PNP

文件：200.04 Kbytes 页数：4 Pages

MOSPEC

统懋

SILICON DARLINGTON POWER TRANSISTORS

NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are designed for general purpose amplifier and low-speed switching applications. PNP complements are TIP105-106-107 Compliance to RoHS.

文件：102.87 Kbytes 页数：3 Pages

COMSET

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE = 1000(Min)@ IC= 3A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) • Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.0V(Max)@ IC= 3A = 2.5V

文件：142.9 Kbytes 页数：3 Pages

ISC

无锡固电

Monolithic Construction With Built In Base- Emitter Shunt Resistors

• Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE =1000 @ V ce =4V, Ic =3A (Min.) • Collector-Emitter Sustaining Voltage • Low Collector-Emitter Saturation Voltage • Industrial Use • Complementary to TIP105/106/107

文件：51.21 Kbytes 页数：4 Pages

Fairchild

仙童半导体

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium−Power Complementary Silicon Transistors Designed for general−purpose amplifier and low−speed switching applications. Features •High DC Current Gain −hFE = 2500 (Typ) @ IC= 4.0 Adc •Collector−Emitter Sustaining Voltage − @ 30 mAdc VCEO(sus)= 60 Vdc (Min) −

文件：218.99 Kbytes 页数：6 Pages

ONSEMI

安森美半导体