PLASTIC POWER TRANSISTORS

Intended for use in Medium Power Linear and Switching Applications

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CDIL

Silicon Power darlington Complementary transistors

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Central

Silicon NPN Darlington Power Transistor

Features • Halogen free available upon request by adding suffix -HF • The complementary PNP types are the TIP115/116/117 respectively • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Mois

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MCC

POWER TRANSISTORS(2.0A,60-100V,50W)

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MOSPEC

统懋

DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

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Motorola

摩托罗拉

SILICON DARLINGTON POWER TRANSISTORS

SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are designed for general purpose amplifier and low-speed switching applications. PNP complements are TIP115-116-117 Compliance to RoHS.

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COMSET

TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR

Description Designed for use in general purpose amplifier and low-speed switching applications.

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DCCOM

道全

Silicon NPN Darlington Power Transistors

DESCRIPTION • With TO-220C package • DARLINGTON • High DC current gain • Low collector saturation voltage • Complement to type TIP115/116/117 APPLICATIONS • For industrial use

文件：175 Kbytes 页数：4 Pages

ISC

无锡固电

Monolithic Construction With Built In Base- Emitter Shunt Resistors

Monolithic Construction With Built In Base-Emitter Shunt Resistors • Complementary to TIP115/116/117 • High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) • Low Collector-Emitter Saturation Voltage • Industrial Use

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Fairchild

仙童半导体

Plastic Medium-Power Complementary Silicon Transistors

Plastic Medium-Power Complementary Silicon Transistors Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 1.0 Adc • Collector−Emitter Sustaining Voltage − @ 30 mAdc VCEO(sus) = 60 Vdc (Min)

文件：269.51 Kbytes 页数：6 Pages

ONSEMI

安森美半导体