TIP115

Monolithic Construction With Built In Base- Emitter Shunt Resistors

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •HighDCCurrentGain:hFE=1000@VCE=-4V,IC=-1A(Min.) •LowCollector-EmitterSaturationVoltage •IndustrialUse •ComplementarytoTIP110/111/112

TIP115

PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS

TIP115

Silicon PNP Darlington Power Transistors

DESCRIPTION •WithTO-220Cpackage •DARLINGTON •HighDCcurrentgain •Lowcollectorsaturationvoltage •ComplementtotypeTIP110/111/112 APPLICATIONS •Forindustrialuse

TIP115

SILICON DARLINGTON POWER TRANSISTORS

SILICONDARLINGTONPOWERTRANSISTORS PNPepitaxial-basetransistorsinamonolithicDalringtoncircuitandhousedinaTO-220enveloppe.Theyaredesignedforgeneralpurposeamplifierandlow-speedswitchingapplications. NPNcomplementsareTIP110-111-112 CompliancetoRoHS.

TIP115

PLASTIC POWER TRANSISTORS

PLASTICPOWERTRANSISTORS IntendedforuseinMediumPowerLinearandSwitchingApplications TO-220PlasticPackage

TIP115

Darlington Power Transistors (PNP)

Features •Designedforgeneral-purposeamplifierandlowspeedswitchingapplications •RoHSCompliant

TIP115

Silicon PNP Darlington Power Transistors

DESCRIPTION •WithTO-220Cpackage •DARLINGTON •HighDCcurrentgain •Lowcollectorsaturationvoltage •ComplementtotypeTIP110/111/112 APPLICATIONS •Forindustrialuse

TIP115

PNP Epitaxial Silicon Darlington Transistors

Features •HighDCCurrentGain:hFE=1000@VCE=4.0V,IC=1.0A(Min.) •LowCollector-EmitterSaturationVoltage •ComplementarytoTIP110/111/112 •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignatRoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating

TIP115

PLASTIC POWER TRANSISTORS

IntendedforuseinMediumPowerLinearandSwitchingApplications

TIP115

Plastic Medium-Power Complementary Silicon Transistor

TESTSPECIFICATION PlasticMedium-PowerComplementarySiliconTransistor