MICROWAVE POWER GaAs FET

FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 48.0dBm at 7.7GHz to 8.5GHz ･HIGH GAIN G1dB= 7.5dB at 7.7GHz to 8.5GHz ･LOW INTERMODULATION DISTORTION IM3(MIN.)= -25dBc at Pout= 41dBm (Single Carrier Level) ･HERMETICALLY SEALED PACKAGE

文件：307.67 Kbytes 页数：6 Pages

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MICROWAVE POWER GaN HEMT

FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 48.0dBm at Pin= 41dBm ･HIGH GAIN GL= 11.5dB at Pin= 20dBm ･LOW INTERMODULATION DISTORTION IM3= -25dBc(Min.) at Pout= 29dBm (Single Carrier Level) ･HERMETICALLY SEALED PACKAGE

文件：346.69 Kbytes 页数：7 Pages

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东芝

MICROWAVE POWER GaAs FET

文件：81.35 Kbytes 页数：4 Pages

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东芝

SOP8

AT

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TO-220

ON

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