MICROWAVE POWER GaN HEMT

FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 48.0dBm at Pin= 41dBm ･HIGH GAIN GL= 11.5dB at Pin= 20dBm ･LOW INTERMODULATION DISTORTION IM3= -25dBc(Min.) at Pout= 29dBm (Single Carrier Level) ･HERMETICALLY SEALED PACKAGE

文件：346.69 Kbytes 页数：7 Pages

TOSHIBA

东芝

MICROWAVE POWER GaAs FET

文件：81.35 Kbytes 页数：4 Pages

TOSHIBA

东芝

MICROWAVE POWER GaAs FET

FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 48.0dBm at 7.7GHz to 8.5GHz ･HIGH GAIN G1dB= 7.5dB at 7.7GHz to 8.5GHz ･LOW INTERMODULATION DISTORTION IM3(MIN.)= -25dBc at Pout= 41dBm (Single Carrier Level) ･HERMETICALLY SEALED PACKAGE

文件：307.67 Kbytes 页数：6 Pages

TOSHIBA

东芝

TRIQUENT
原厂封装

TRIQUENT

上传：深圳市朱博士电子科技有限公司

VISHAY/威世
原厂封装

VISHAY/威世

上传：深圳市恒佳微电子有限公司