SILICON CONTROLLED RECTIFIERS

SILICON CONTROLLED RECTIFIERS ● 2 A Continuous On-State Current ● 15 A Surge-Current ● Glass Passivated Wafer ● 400 V to 600 V Off-State Voltage ● Max IGT of 200 µA ● Package Options

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POINN

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60– 80– 100 VOLTS 80 WATTS . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain —hFE= 2500 (Typ) @ IC= 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 30 mAdc

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MOTOROLA

摩托罗拉

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium−Power Complementary Silicon Transistors Designed for general−purpose amplifier and low−speed switching applications. Features •High DC Current Gain −hFE = 2500 (Typ) @ IC= 4.0 Adc •Collector−Emitter Sustaining Voltage − @ 30 mAdc VCEO(sus)= 60 Vdc (Min) −

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ONSEMI

安森美半导体

GLASS PASSIVATED JUNCTION ULTRAFAST SWITCHING RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 1.0 Ampere)

GLASS PASSIVATED JUNCTION ULTRAFAST RECOVERY RECTIFIER VOLTAGE 50 to 1000 Volts CURRENT 1.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound • Exceeds environmental standards of

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PANJIT

強茂