SILICON BIDIRECTIONAL TRIODE THYRISTOR

DESCRIPTION This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to the on-state by either polarity of gate signal with main Terminal 2 at either polarity. • 4 A RMS • Glass Passivated Wafer • 100 V to 800 V Off-State Voltage •Max IGT

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COMSET

SILICON TRIACS

SILICON TRIACS ● Sensitive Gate Triacs ● 4 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 5 mA (Quadrants 1 - 3)

文件：95.53 Kbytes 页数：5 Pages

POINN

SILICON BIDIRECTIONAL TRIODE THYRISTOR

文件：164.52 Kbytes 页数：4 Pages

COMSET

SILICON TRIACS

文件：112.19 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SILICON TRIACS

Power Innovations

Thyristor

Comset