SILICON BIDIRECTIONAL TRIODE THYRISTOR

DESCRIPTION This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to the on-state by either polarity of gate signal with main Terminal 2 at either polarity. • 4 A RMS • Glass Passivated Wafer • 100 V to 800 V Off-State Voltage •Max IGT

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COMSET

SILICON TRIACS

SILICON TRIACS ● Sensitive Gate Triacs ● 4 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 5 mA (Quadrants 1 - 3)

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POINN

SILICON BIDIRECTIONAL TRIODE THYRISTOR

文件：164.52 Kbytes 页数：4 Pages

COMSET

SILICON TRIACS

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Thyristor

Comset

Package：TO-220-3；包装：管件 类别：分立半导体产品 晶闸管 - TRIAC 描述：TRIAC SENS GATE 700V 4A TO220

Bourns Inc.