TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

DESCRIPTION The TH58100 is a single 3.3 V 1-Gbit (1,107,296,256) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes x 32 pages x 8192 blocks. The device has a 528-byte static register which allows program and read data to be transferred between t

文件：421.77 Kbytes 页数：43 Pages

TOSHIBA

东芝

8 GBIT (1G × 8 BIT) CMOS NAND E2PROM

DESCRIPTION The TH58BVG3S0HBAI4 is a single 3.3V 8Gbit (8,858,370,048 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 4096 blocks. The device has a 4224-byte static register which allows program and read data to be tr

文件：2.56183 Mbytes 页数：54 Pages

TOSHIBA

东芝

8 GBIT (1G × 8 BIT) CMOS NAND E2PROM

DESCRIPTION The TH58BVG3S0HBAI6 is a single 3.3V 8Gbit (8,858,370,048 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 4096 blocks. The device has a 4224-byte static register which allows program and read data to be tr

文件：2.57235 Mbytes 页数：54 Pages

TOSHIBA

东芝

8 GBIT (1G × 8 BIT) CMOS NAND E2PROM

DESCRIPTION The TH58BVG3S0HTAI0 is a single 3.3V 8Gbit (8,858,370,048 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 4096 blocks. The device has a 4224-byte static register which allows program and read data to be tr

文件：2.5825 Mbytes 页数：54 Pages

TOSHIBA

东芝

8 GBIT (1G × 8 BIT) CMOS NAND E2PROM

DESCRIPTION The TH58BYG3S0HBAI4 is a single 1.8V 8Gbit (8,858,370,048 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 4096 blocks. The device has a 4224-byte static register which allows program and read data to be tr

文件：2.57148 Mbytes 页数：54 Pages

TOSHIBA

东芝

TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

2GBIT (256M u 8BITS) CMOS NAND E2PROM DESCRIPTION The TH58NVG1S3A is a single 3.3-V 2G-bit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048+64) bytes x 64 pages x 2048 blocks. The device has a 2112-byte static registers whic

文件：368.76 Kbytes 页数：32 Pages

TOSHIBA

东芝

TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

2GBIT (256M u 8BITS) CMOS NAND E2PROM DESCRIPTION The TH58NVG1S3A is a single 3.3-V 2G-bit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048+64) bytes x 64 pages x 2048 blocks. The device has a 2112-byte static registers whic

文件：368.76 Kbytes 页数：32 Pages

TOSHIBA

东芝

Semiconductor & Storge Products Company

NAND Flash Memory (SLC Large Capacity)

文件：39.12 Kbytes 页数：1 Pages

TOSHIBA

东芝

Semiconductor & Storge Products Company

NAND Flash Memory (SLC Large Capacity)

文件：39.12 Kbytes 页数：1 Pages

TOSHIBA

东芝

Semiconductor & Storge Products Company

NAND Flash Memory (SLC Large Capacity)

文件：39.12 Kbytes 页数：1 Pages

TOSHIBA

东芝