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TH58BYG3S0HBAI4规格书详情
DESCRIPTION
The TH58BYG3S0HBAI4 is a single 1.8V 8Gbit (8,858,370,048 bits) NAND Electrically Erasable and
Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 4096 blocks.
The device has a 4224-byte static register which allows program and read data to be transferred between the register
and the memory cell array in 4224-bytes increments. The Erase operation is implemented in a single block unit
(256 Kbytes + 8 Kbytes: 4224 bytes × 64 pages).
The TH58BYG3S0HBAI4 is a serial-type memory device which utilizes the I/O pins for both address and data
input/output as well as for command inputs. The Erase and Program operations are automatically executed making
the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still
cameras and other systems which require high-density non-volatile memory data storage.
The TH58BYG3S0HBAI4 has ECC logic on the chip and 8bit read errors for each 528Bytes can be corrected
internally.
FEATURES
• Organization
x8
Memory cell array 4224 × 128K × 8 × 2
Register 4224 × 8
Page size 4224 bytes
Block size (256K + 8K) bytes
• Modes
Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy,
Multi Page Read, Multi Page Program, Multi Block Erase, ECC Status Read
• Mode control
Serial input/output
Command control
• Number of valid blocks
Min 4016 blocks
Max 4096 blocks
• Power supply
VCC = 1.7V to 1.95V
• Access time
Cell array to register 55 μs typ. (Single Page Read) / 90 μs typ. (Multi Page Read)
Read Cycle Time 25 ns min (CL=30pF)
• Program/Erase time
Auto Page Program 340 μs/page typ.
Auto Block Erase 3.5 ms/block typ.
• Operating current
Read (25 ns cycle) 30 mA max
Program (avg.) 30 mA max
Erase (avg.) 30 mA max
Standby 100 μA max
• Package
P-TFBGA63-0911-0.80CZ (Weight: 0.165 g typ.)
• 8bit ECC for each 528Byte is implemented on the chip.
产品属性
- 产品编号:
TH58BYG3S0HBAI4
- 制造商:
Kioxia America, Inc.
- 类别:
集成电路(IC) > 存储器
- 系列:
Benand™
- 包装:
托盘
- 存储器类型:
非易失
- 存储器格式:
闪存
- 技术:
FLASH - NAND(SLC)
- 存储容量:
8Gb(1G x 8)
- 存储器接口:
并联
- 写周期时间 - 字,页:
25ns
- 电压 - 供电:
1.7V ~ 1.95V
- 工作温度:
-40°C ~ 85°C(TA)
- 安装类型:
表面贴装型
- 封装/外壳:
63-VFBGA
- 供应商器件封装:
63-TFBGA(9x11)
- 描述:
IC FLASH 8GBIT PARALLEL 63TFBGA
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
TOSHIBA |
23+ |
NA |
9 |
专业电子元器件供应链正迈科技特价代理QQ1304306553 |
询价 | ||
TOSHIBA |
21+ |
FBGA |
35200 |
一级代理/放心采购 |
询价 | ||
TOSHIBA/东芝 |
23+ |
BGA |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
询价 | ||
Kioxia America Inc |
23+/24+ |
63-VFBGA |
8600 |
只供原装进口公司现货+可订货 |
询价 | ||
TH58C512XB |
10 |
10 |
询价 | ||||
ST |
BGA |
93480 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 | |||
TOSHIBA |
22+23+ |
TSOP |
32146 |
绝对原装正品全新进口深圳现货 |
询价 | ||
Kioxia |
21+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
询价 | |||
TOSHIBA |
BGA67 |
6000 |
原装现货,长期供应,终端可账期 |
询价 | |||
TOSHIBA/东芝 |
19+ |
BGA |
16080 |
进口原装现货 |
询价 |