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零件编号	下载订购	功能描述/丝印	制造商上传企业	LOGO
FGW30N60VD	文件：656.97 Kbytes Page：8 Pages	DiscreteIGBT(High-SpeedVseries)600V/30A	FujiFuji Electric 富士电机富士电机株式会社	Fuji
G30N60	文件：178.25 Kbytes Page：8 Pages	600V,SMPSSeriesN-ChannelIGBT TheHGTG30N60A4combinesthebestfeaturesofhighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.ThisIGBTisidealformanyhighvoltageswitchingapplicationsoperatingathighfrequencieswherelowconductionlossesareessential.Thisdevicehasbeen	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
G30N60	文件：221.78 Kbytes Page：8 Pages	60A,600V,UFSSeriesN-ChannelIGBT TheHGTG30N60B3isaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
G30N60	文件：116.91 Kbytes Page：7 Pages	63A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes TheHGTG30N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel	Intersil Intersil Corporation	Intersil
G30N60	文件：144.62 Kbytes Page：8 Pages	63A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes TheHGTG30N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
G30N60	文件：105.22 Kbytes Page：7 Pages	60A,600V,UFSSeriesN-ChannelIGBT TheHGTG30N60B3isaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel	Intersil Intersil Corporation	Intersil
G30N60	文件：191.86 Kbytes Page：9 Pages	600V,SMPSSeriesN-ChannelIGBTwith TheHGTG30N60A4DisaMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderat	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
G30N60	文件：92.78 Kbytes Page：8 Pages	600V,SMPSSeriesN-ChannelIGBT TheHGTG30N60A4isaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel	Intersil Intersil Corporation	Intersil
G30N60	文件：100.45 Kbytes Page：9 Pages	600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode 600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG30N60A4DisaMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolar	Intersil Intersil Corporation	Intersil
G30N60	文件：367.38 Kbytes Page：12 Pages	FastIGBTinNPT-technology	InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司	Infineon

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市安富世纪电子有限公司	TGAN30N60FDR	TRINNO	23+	TO-3P	50000	全新原装正品现货,支持订货	询价
深圳市威雅利发展有限公司	TGAN30N60FDR	TRINNO	17+	TO-3P	500	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市博中泰实业有限公司	TGAN30N60FDR	TRINNO	24+	TO-3P	60000		询价
深圳市威尔健半导体有限公司	TGAN30N60FDR其他三极管	TRINNO	23+	TO-3P	50000	全新原装正品现货,支持订货	询价
深圳市众芯源半导体有限公司	TGAN30S160FD	TRINNO/特瑞诺	23+	TO-3P	3600	只做原装正品	询价
富凯科技(深圳）有限公司	TGAN30S160FD	TRINNO/特瑞诺	24+	TO-3P	3600	只做原装，欢迎询价，量大价优	询价
深圳市华斯顿科技有限公司	TGAN40N110FD	TRINNO	25+23+	TO-3PN	30601	绝对原装正品全新进口深圳现货	询价
贸泽芯城（深圳）电子科技有限公司	TGAN40N120F2D	TRINNO	23+	TO-247	11200	原厂授权一级代理、全球订货优势渠道、可提供一站式BO	询价
深圳市科恒伟业电子有限公司	TGAN40N120F2DW	TRINNO	21+	TO-247	5590	只做原装正品假一赔十!正规渠道订货!	询价
深圳市亿联芯电子科技有限公司	TGAN40N120F2DW	TRINNO	2023+	TO-247	2400	全新原装正品,优势价格	询价

更多TGAN30N60FDR供应商更新时间2025-5-28 13:01:00

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