G30N60中文资料PDF规格书
G30N60规格书详情
The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49343. The diode
used in anti-parallel is the development type TA49373.
Features
• >100kHz Operation At 390V, 30A
• 200kHz Operation At 390V, 18A
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . . . . 60ns at TJ= 125°C
• Low Conduction Loss
• Temperature Compensating SABER™ Model www.fairchildsemi.com
产品属性
- 型号：
G30N60
- 制造商：
FAIRCHILD
- 制造商全称：
Fairchild Semiconductor
- 功能描述：
60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD |
18+ |
TO-3P |
85600 |
保证进口原装可开17%增值税发票 |
询价 | ||
Infineon(英飞凌) |
23+ |
N/A |
589610 |
新到现货 原厂一手货源 价格秒杀代理! |
询价 | ||
INF |
23+ |
TO-3P |
65480 |
询价 | |||
FSC |
23+ |
TO247 |
9526 |
询价 | |||
FAIRCHILD/仙童 |
2023+ |
TO247 |
6893 |
十五年行业诚信经营,专注全新正品 |
询价 | ||
Infineon(英飞凌) |
22+ |
标准封装 |
7000 |
公司只有原装 |
询价 | ||
Infineon(英飞凌) |
2021/2022+ |
标准封装 |
7000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
询价 | ||
FAIRCHILD |
2020+ |
TO-3PL |
350000 |
100%进口原装正品公司现货库存 |
询价 | ||
SEC |
23+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
IR |
23+ |
TO-3P |
12360 |
全新原装现货 |
询价 |
