G30N60中文资料PDF规格书
G30N60规格书详情
The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49051. The diode used in anti-parallel with the IGBT is the development type TA49053. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential. Formerly Developmental Type TA49014.
Features
• 63A, 600V at TC= 25°C
• Typical Fall Time. . . . . . . . . . . . . . . . 230ns at TJ= 150°C
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
产品属性
- 型号:
G30N60
- 制造商:
FAIRCHILD
- 制造商全称:
Fairchild Semiconductor
- 功能描述:
60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SEC |
23+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
FAIRCHILD |
1408+ |
TO-3P |
9500 |
绝对原装进口现货可开增值税发票 |
询价 | ||
FAIRCHILD/仙童 |
21+ |
TO247 |
19 |
原装现货假一赔十 |
询价 | ||
infineon/英飞凌 |
2021/2022+ |
NA |
7000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
询价 | ||
FAIRCHIL仙童 |
23+ |
管3P |
18000 |
询价 | |||
FAIRCHI |
2018+ |
TO247 |
6528 |
承若只做进口原装正品假一赔十! |
询价 | ||
FAIRCHILD |
2020+ |
TO-3PL |
350000 |
100%进口原装正品公司现货库存 |
询价 | ||
IR |
23+ |
TO-3P |
12360 |
全新原装现货 |
询价 | ||
FSC |
23+ |
TO247 |
9526 |
询价 | |||
HARRIS |
23+ |
TO-3P |
3000 |
原装正品假一罚百!可开增票! |
询价 |