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EPE6030

10Base-TModulewithEnhancedCommonModeAttenuation

PCA

PCA Electronics, Inc.

EPE6030G

10Base-TInterfaceModulewithEnhancedCommonModeAttenuation

PCA

PCA Electronics, Inc.

FBR6030

60AmpHighVoltageSCHOTTKYBARRIERRECTIFIERSMechanicalDimensions

Features ■HIGHCURRENTCAPABILITY WITHLOWVF ■HIGHEFFICIENCYw/LOWPOWERLOSS ■HIGHSURGEVOLTAGEAND TRANSIENTPROTECTION ■MEETSULSPECIFICATION94V-0

FCI

Amphenol ICC

FDB6030

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-ChannellogiclevelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thesedevicesareparticularlysuit

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDB6030

N-ChannelLogicLevelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelLogicLevelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. TheseMOSFETsfeaturefasterswitchingandlowergatechargethanotherMOSFETswith

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDB6030BL

N-ChannelLogicLevelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelLogicLevelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. TheseMOSFETsfeaturefasterswitchingandlowergatechargethanotherMOSFETswith

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDB6030BL

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=40A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=18mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDB6030L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=48A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=13mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDB6030L

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-ChannellogiclevelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thesedevicesareparticularlysuit

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDD6030

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

GeneralDescription ThisN-ChannelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheonstateresistanceandyetmaintainlowgatechargeforsuperiorswitchingperformance. Features ·12A,30VRDS(ON)=1

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDD6030

N-ChannelPowerTrenchTMMOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizedforlowgatecharge,lowRDS(ON),fastswitchingspeedandextremelylowRDS(O

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDD6030BL

N-ChannelPowerTrenchTMMOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizedforlowgatecharge,lowRDS(ON),fastswitchingspeedandextremelylowRDS(O

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDD6030BL

30VN-ChannelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizedforlowgatecharge,lowRDS(ON),fastswitchingspeedandextremelylowRDS(O

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDD6030BL

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=35A@TC=25℃ ·DrainSourceVoltage- :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=18mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchmod

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDD6030L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=50A@TC=25℃ ·DrainSourceVoltage- :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=13.5mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchm

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDD6030L

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

GeneralDescription ThisN-ChannelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheonstateresistanceandyetmaintainlowgatechargeforsuperiorswitchingperformance. Features ·12A,30VRDS(ON)=1

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDD6030L

30VN-ChannelPowerTrenchMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDP6030

N-ChannelLogicLevelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelLogicLevelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. TheseMOSFETsfeaturefasterswitchingandlowergatechargethanotherMOSFETswith

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDP6030BL

N-ChannelLogicLevelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelLogicLevelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. TheseMOSFETsfeaturefasterswitchingandlowergatechargethanotherMOSFETswith

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDP6030BL

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=40A@TC=25℃ ·DrainSourceVoltage- :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=18mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

详细参数

  • 型号:

    TF6030T

  • 制造商:

    TDK

  • 制造商全称:

    TDK Electronics

  • 功能描述:

    Common Mode Choke Coils Line Filters for AC Power Supply Toroidal Core Type

供应商型号品牌批号封装库存备注价格
TDK Corporation
21+
2.362 直径(60.00mm)
21000
滤波器原装渠道正品现货库存
询价
TDK/东电化
15+ROHS
DIP
144000
一级质量保证长期稳定提供货优价美
询价
TDK/东电化
DIP
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
TDK
23+
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
TDK
23+
-
10
优势代理渠道,原装正品,可全系列订货开增值税票
询价
TDK Corporation
24+
水平式,4 PC 引脚
9350
独立分销商,公司只做原装,诚心经营,免费试样正品保证
询价
23+
N/A
58900
一级代理放心采购
询价
TDK
18+
SMD
288000
原装正品价格优势
询价
23+
N/A
58300
一级代理放心采购
询价
TF(拓锋)
23+
TO2523
6000
诚信服务,绝对原装原盘
询价
更多TF6030T供应商 更新时间2024-5-29 11:10:00