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AOD4T60

TO252(DPAK)PACKAGEMARKINGDESCRIPTION

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOD4T60

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半导体有限公司

AOD4T60L

TO252(DPAK)PACKAGEMARKINGDESCRIPTION

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOD4T60P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=4A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2.1Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOD4T60P

600V,4AN-ChannelMOSFET

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOI4T60

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

AOI4T60

TO251APACKAGEMARKINGDESCRIPTION

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOI4T60L

TO251APACKAGEMARKINGDESCRIPTION

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOI4T60P

600V,4AN-ChannelMOSFET

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOI4T60P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

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