首页 >TDSO1110L>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Lowvoltageversatiletelephonetransmissioncircuitwithdiallerinterface | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
LOWVOLTAGEVERSATILETELEPHONETRANSMISSIONCIRCUITWITHDIALLERINTERFACE | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | UTC | ||
LOWVOLTAGEVERSATILETELEPHONETRANSMISSIONTELEPHONETRANSMISSIONINTERFACE DESCRIPTION TheUTCTEA1110Aisaversatiletelephonetransmissioncircuitprovidingfullspeechandlineinterfacefunctionsinelectronictelephonesets.Thisdeviceworksatalinevoltagewhichcanbeaslowas1.6VDC(withreducedperformance)toenableparallelconnectionoftelephonese | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | UTC | ||
Lowvoltageversatiletelephonetransmissioncircuitwithdiallerinterface | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
Lowvoltageversatiletelephonetransmissioncircuitwithdiallerinterface | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
MODULEFORSTEPPERMOTORS | TRINAMIC TRINAMIC Motion Control GmbH & Co. KG. | TRINAMIC | ||
25to30WATTSINGLE,DUALandTRIPLEOUTPUTDC-DCCONVERTERS [TOTALPOWERINTERNATIONAL.INC.] | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | ETC1 | ||
MOSFETsSiliconN-channelMOS Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators Features (1)High-speedswitching (2)Smallgatecharge:QSW=2.6nC(typ.) (3)Lowdrain-sourceon-resistance:RDS(ON)=96mΩ(typ.)(VGS=10V) (4)Lowleakagecurrent:IDSS=10μA(max)(VDS=200V) (5 | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
MOSFETsSiliconN-channelMOS Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators Features (1)High-speedswitching (2)Smallgatecharge:QSW=4.2nC(typ.) (3)Lowdrain-sourceon-resistance:RDS(ON)=95mΩ(typ.)(VGS=10V) (4)Lowleakagecurrent:IDSS=10μA(max)(VDS=250V) (5 | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
MOSFETsSiliconN-channelMOS Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators Features (1)High-speedswitching (2)Smallgatecharge:QSW=2.6nC(typ.) (3)Lowdrain-sourceon-resistance:RDS(ON)=96mΩ(typ.)(VGS=10V) (4)Lowleakagecurrent:IDSS=10μA(max)(VDS=200V) (5 | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA |
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