GaN HEMTs

Gallium nitride devices have revolutionized power conversion in other industries and are now available in high reliability qualified form with plastic encapsulated packaging that has undergone stringent reliability and electrical testing to ensure mission critical success. The Teledyne HiRel GaN HEM

Teledyne HiRel

Bottom-side cooled, 100V E-mode GaN transistor Product Specification

Features •100 V enhancement mode GaN power switch•Bottom-side cooled configuration•RDS(on) = 7 mΩ•IDS(max) = 90 A•Ultra-low FOM Island Technology® die•Low inductance GaNPX® package•Easy gate drive requirements (0 V to 6 V)•Transient tolerant gate drive (-20 V / +10 V)•Very high switching frequenc

文件：3.00568 Mbytes 页数：19 Pages

TELEDYNE

华特力科

Bottom-side cooled, 100V E-mode GaN transistor Product Specification

Features •100 V enhancement mode GaN power switch•Bottom-side cooled configuration•RDS(on) = 7 mΩ•IDS(max) = 90 A•Ultra-low FOM Island Technology® die•Low inductance GaNPX® package•Easy gate drive requirements (0 V to 6 V)•Transient tolerant gate drive (-20 V / +10 V)•Very high switching frequenc

文件：3.00568 Mbytes 页数：19 Pages

TELEDYNE

华特力科

DIP

TDPOWER腾达

上传：深圳市跃创芯科技有限公司

0805

TAIYO YUDEN/太阳诱电

上传：深圳市胜励微电子有限公司