首页 >TDA5175T>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
7V600mA75dBHighPSRR,HighSpeedLDO | ACE ACE Technology Co., LTD. | ACE | ||
7V600mA75dBHighPSRR,HighSpeedLDO | ACE ACE Technology Co., LTD. | ACE | ||
Single-Channel,1024-Position,DigitalRheostatwithI2CInterfaceand50-TPMemory | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
RFAMPLIFIERMODEL | APITECH API Technologies Corp | APITECH | ||
5000WATTS(AC)DC/DCSINGLEOUTPUT 5000WATTS(AC)DC/DCSINGLEOUTPUT | POWERBOX Powerbox manufactures | POWERBOX | ||
5000WATTS(AC)DC/DCSINGLEOUTPUT 5000WATTS(AC)DC/DCSINGLEOUTPUT | POWERBOX Powerbox manufactures | POWERBOX | ||
5000WATTS(AC)DC/DCSINGLEOUTPUT 5000WATTS(AC)DC/DCSINGLEOUTPUT | POWERBOX Powerbox manufactures | POWERBOX | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -55V,-50A,RDS(ON)=23mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=28mW@VGS=4.5V. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-55V,-50A,RDS(ON)=23mΩ@VGS=10V. RDS(ON)=28mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263package. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-55V,-40A,RDS(ON)=23mΩ@VGS=-10V. RDS(ON)=28mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-251&TO-252package. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET |
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