P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -55V, -40A, RDS(ON) = 23mΩ @VGS = -10V. RDS(ON) = 28mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-251 & TO-252 package.

文件：274 Kbytes 页数：4 Pages

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -55V, -40A, RDS(ON) = 23mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 28mW @VGS = -4.5V. Lead-free plating ; RoHS compliant.

文件：269.98 Kbytes 页数：4 Pages

CET-MOS

华瑞

P Channel MOSFET

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -55V, -50A, RDS(ON) = 23mΩ @VGS = 10V. RDS(ON) = 28mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-220 & TO-263 package.

文件：683.38 Kbytes 页数：4 Pages

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -55V, -50A, RDS(ON) = 23mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) = 28mW @VGS = 4.5V.

文件：503.67 Kbytes 页数：4 Pages

CET-MOS

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -55V, -40A, RDS(ON) = 23mΩ @VGS = -10V. RDS(ON) = 28mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-251 & TO-252 package.

文件：274 Kbytes 页数：4 Pages

CET

华瑞