首页 >TDA2791Q>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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HC49USDIP25MHzCrystalUnit Features: SurfaceMountSeamWeldPackage GoodFrequencyPerturbationandStabilityovertemperature DescriptionandApplications: HC49UScrystalunitforuseinwirelesstelecommunicationsdevices | TAI-SAW TAI-SAW TECHNOLOGY CO., LTD. | TAI-SAW | ||
1000MHzQuadratureDemodulator | Temic TEMIC Semiconductors | Temic | ||
1000MHzQuadratureDemodulator | Temic TEMIC Semiconductors | Temic | ||
MOSFIELDEFFECTTRANSISTOR DESCRIPTION TheμPA2791GRisN-andP-channelMOSFieldEffect Transistorsdesignedforswitchingapplication. FEATURES •Lowon-stateresistance N-channelRDS(on)1=36.0mΩMAX.(VGS=10V,ID=3.0A) RDS(on)2=50.0mΩMAX.(VGS=4.5V,ID=3.0A) P-channelRDS(on)1=82mΩMAX.(VG | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
N-andP-Channel30V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •MotorDrive •MobilePowerBank | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-ANDP-CHANNELPOWERMOSFET DESCRIPTION TheμPA2791GRisN-andP-channelMOSFieldEffectTransistorsdesignedforswitchingapplication. FEATURES •Lowon-stateresistance N-channelRDS(on)1=36.0mΩMAX.(VGS=10V,ID=3.0A) RDS(on)2=50.0mΩMAX.(VGS=4.5V,ID=3.0A) P-channel | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
5V,SUPERMINIMOLDSILICONMMICWIDEBANDAMPLIFIER | CEL California Eastern Labs | CEL | ||
5V,SUPERMINIMOLDSILICONMMICVHF-UHFWIDEBANDAMPLIFIER DESCRIPTION TheµPC2791TBandµPC2792TBaresiliconmonolithicintegratedcircuitsdesignedas2ndIFbufferamplifierforDBStuners.TheseICsarepackagedinsuperminimoldpackagewhichissmallerthanconventionalminimold.So,inthecaseofreducingyoursystemsize,µPC2791TBandµPC2792T | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC |
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