TI-107

Pulsetransformars

TICP107

SILICONCONTROLLEDRECTIFIERS

SILICONCONTROLLEDRECTIFIERS ●1AContinuousOn-StateCurrent ●15ASurge-Current ●GlassPassivatedWafer ●400Vto600VOff-StateVoltage ●IGT50µAmin,200µAmax ●di/dt100A/µs ●PackageOptions

TICP107D

SILICONCONTROLLEDRECTIFIERS

SILICONCONTROLLEDRECTIFIERS ●1AContinuousOn-StateCurrent ●15ASurge-Current ●GlassPassivatedWafer ●400Vto600VOff-StateVoltage ●IGT50µAmin,200µAmax ●di/dt100A/µs ●PackageOptions

TICP107M

SILICONCONTROLLEDRECTIFIERS

SILICONCONTROLLEDRECTIFIERS ●1AContinuousOn-StateCurrent ●15ASurge-Current ●GlassPassivatedWafer ●400Vto600VOff-StateVoltage ●IGT50µAmin,200µAmax ●di/dt100A/µs ●PackageOptions

TIP107

PNPSILICONPOWERDARLINGTONS

●DesignedforComplementaryUsewithTIP100,TIP101andTIP102 ●80Wat25°CCaseTemperature ●8AContinuousCollectorCurrent ●MaximumVCE(sat)of2.5VatIC=8A

TIP107

DARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS

PlasticMedium−PowerComplementarySiliconTransistors Designedforgeneral−purposeamplifierandlow−speedswitchingapplications. Features •HighDCCurrentGain−hFE=2500(Typ)@IC=4.0Adc •Collector−EmitterSustainingVoltage−@30mAdc VCEO(sus)=60Vdc(Min)−

TIP107

DARLINGTON8AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS

DARLINGTON8AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60–80–100VOLTS 80WATTS ...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. •HighDCCurrentGain—hFE=2500(Typ)@IC=4.0Adc •Collector–EmitterSustainingVoltage—@30mAdc

TIP107

POWERTRANSISTORS(8A,60-100V,80W)

8AmpereDARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS60-100VOLTS80WATTS TIP100,TIP101,TIP102-->NPN TIP105,TIP106,TIP107-->PNP

TIP107

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors

MonolithicConstructionWithBuiltInBaseEmitterShuntResistors •HighDCCurrentGain:hFE=1000@VCE=-4V,IC=-3A(Min.) •Collector-EmitterSustainingVoltage •LowCollector-EmitterSaturationVoltage •IndustrialUse •ComplementarytoTIP100/101/102

TIP107

PNPSILICONPOWERDARLINGTONS

TIP100,TIP101,TIP102-->NPN TIP105,TIP106,TIP107-->PNP