TIP105

PNPSILICONPOWERDARLINGTONS

●DesignedforComplementaryUsewithTIP100,TIP101andTIP102 ●80Wat25°CCaseTemperature ●8AContinuousCollectorCurrent ●MaximumVCE(sat)of2.5VatIC=8A

TIP105

DARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS

PlasticMedium−PowerComplementarySiliconTransistors Designedforgeneral−purposeamplifierandlow−speedswitchingapplications. Features •HighDCCurrentGain−hFE=2500(Typ)@IC=4.0Adc •Collector−EmitterSustainingVoltage−@30mAdc VCEO(sus)=60Vdc(Min)−

TIP105

DARLINGTON8AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS

DARLINGTON8AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60–80–100VOLTS 80WATTS ...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. •HighDCCurrentGain—hFE=2500(Typ)@IC=4.0Adc •Collector–EmitterSustainingVoltage—@30mAdc

TIP105

POWERTRANSISTORS(8A,60-100V,80W)

8AmpereDARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS60-100VOLTS80WATTS TIP100,TIP101,TIP102-->NPN TIP105,TIP106,TIP107-->PNP

TIP105

PNP(HIGHDCCURRENTGAINMIN

HGIHDCCURRENTGAINMINhFE=1000@VCE=-4V,Ic=-3A COLLECTOR-EMITTERSUSTAININGVOLTAGELOWCOLLECTOR-EMITTERSATURATIONVOLTAGEMONOLITHICCONSTRUCTIONWITHBUILTINBASE-EMITTERSHUNTRESISTORSINDUSTRIALUSE ComplementarytoTIP100/101/102

TIP105

PNPSILICONPOWERDARLINGTONS

TIP100,TIP101,TIP102-->NPN TIP105,TIP106,TIP107-->PNP

TIP105

PowerDarlingtonsforLinearandSwitchingApplications

TIP100,101,102NPNPLASTICPOWERTRANSISTORS TIP105,106,107PNPPLASTICPOWERTRANSISTORS PowerDarlingtonsforLinearandSwitchingApplications

TIP105

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors

MonolithicConstructionWithBuiltInBaseEmitterShuntResistors •HighDCCurrentGain:hFE=1000@VCE=-4V,IC=-3A(Min.) •Collector-EmitterSustainingVoltage •LowCollector-EmitterSaturationVoltage •IndustrialUse •ComplementarytoTIP100/101/102

TIP105

PLASTICPOWERTRANSISTORS

PLASTICPOWERTRANSISTORS IntendedforuseinLinearSwitchingApplications

TIP105

DarlingtonPowerTransistors(PNP)

DarlingtonPowerTransistors(PNP) Features •Designedforgeneral-purposeamplifierandlowspeedswitchingapplications •RoHSCompliant