Monolithic Construction With Built In Base- Emitter Shunt Resistors

Monolithic Construction With Built In Base Emitter Shunt Resistors • High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.) • Collector-Emitter Sustaining Voltage • Low Collector-Emitter Saturation Voltage • Industrial Use • Complementary to TIP100/101/102

文件：50.15 Kbytes 页数：4 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

PNP Epitaxial Silicon Darlington Transistor

Monolithic Construction With Built In Base Emitter Shunt Resistors • High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.) • Collector-Emitter Sustaining Voltage • Low Collector-Emitter Saturation Voltage • Industrial Use • Complementary to TIP100/101/102

文件：550.61 Kbytes 页数：5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

PNP Epitaxial Silicon Darlington Transistor

Monolithic Construction With Built In Base Emitter Shunt Resistors • High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.) • Collector-Emitter Sustaining Voltage • Low Collector-Emitter Saturation Voltage • Industrial Use • Complementary to TIP100/101/102

文件：550.61 Kbytes 页数：5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium−Power Complementary Silicon Transistors Designed for general−purpose amplifier and low−speed switching applications. Features •High DC Current Gain −hFE = 2500 (Typ) @ IC= 4.0 Adc •Collector−Emitter Sustaining Voltage − @ 30 mAdc VCEO(sus)= 60 Vdc (Min) −

文件：218.99 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

PNP (HIGH DC CURRENT GAIN MIN

HGIH DC CURRENT GAIN MIN hFE=1000 @ VCE=-4V, Ic=-3A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE Complementary to TIP100/101/102

文件：262 Kbytes 页数：6 Pages

Samsung

三星

Power Darlingtons for Linear and Switching Applications

TIP100, 101, 102 NPN PLASTIC POWER TRANSISTORS TIP105, 106, 107 PNP PLASTIC POWER TRANSISTORS Power Darlingtons for Linear and Switching Applications

文件：26.06 Kbytes 页数：2 Pages

boca

博卡

PLASTIC POWER TRANSISTORS

PLASTIC POWER TRANSISTORS Intended for use in Linear Switching Applications

文件：320.51 Kbytes 页数：3 Pages

CDIL

PNP Plastic Medium-Power Silicon Transistors

Features • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix designates RoHS Compliant. See ordering information) • High DC Current Gain : hFE=2500 (Typ) @ IC=4.0Adc • Low Collector-Emitter Saturation Voltage • Monolithic Construction with Built-in Base-Emitter Shunt Resistors • TO-220 Compac

文件：268.47 Kbytes 页数：4 Pages

MCC

POWER TRANSISTORS(8A,60-100V,80W)

8 Ampere DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 80 WATTS TIP100,TIP101,TIP102 --> NPN TIP105,TIP106,TIP107 --> PNP

文件：200.04 Kbytes 页数：4 Pages

MOSPEC

统懋

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60– 80– 100 VOLTS 80 WATTS . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain —hFE= 2500 (Typ) @ IC= 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 30 mAdc

文件：218.99 Kbytes 页数：6 Pages

Motorola

摩托罗拉