首页 >TCD2719DG(Z>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
PhotocouplersInfraredLED&PhotoIC Applications •IntelligentPowerModuleSignalIsolation •FactoryAutomation(FA) •IndustrialInverters General TheTLP2719consistsofahigh-outputinfraredLEDcoupledwithahigh-gain,high-speedphotodetector.Itis housedintheSO6Lpackage. Thisproductcanbemountedonthesa | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
CrystalUnitSMD2.5x2.026.0MHz Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage DescriptionandApplications: Surfacemount2.5mmx2.0mmcrystalunitforuseinwirelesscommunicationsdevices, especiallyforan | TAI-SAW TAI-SAW TECHNOLOGY CO., LTD. | TAI-SAW | ||
CrystalUnitSMD2.5x2.026.00MHz Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage MoistureSensitivityLevel(MSL):Level-1 DescriptionandApplications: Surfacemount2.5mmx2.0mmcrystalunitforuseinwireless | TAI-SAW TAI-SAW TECHNOLOGY CO., LTD. | TAI-SAW | ||
MOSFIELDEFFECTTRANSISTOR DESCRIPTION TheμPA2719AGRisP-ChannelMOSFieldEffect Transistordesignedforpowermanagementapplicationsof notebookcomputersandLithium-Ionbatteryprotection circuit. FEATURES •Lowon-stateresistance RDS(on)1=13mΩMAX.(VGS=−10V,ID=−5.0A) RDS(on)2=20.9mΩMAX.(VGS | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR DESCRIPTION TheμPA2719GRisP-ChannelMOSFieldEffectTransistor designedforpowermanagementapplicationsofnotebook computersandLi-ionbatteryprotectioncircuit. FEATURES •Lowon-stateresistance RDS(on)1=13mΩMAX.(VGS=−10V,ID=−5.0A) RDS(on)2=20.9mΩMAX.(VGS=−4.5 | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SWITCHINGP-CHANNELPOWERMOSFET | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|
