TLP2719

Marking：TLP2719；Package：11-4N1A；Photocouplers Infrared LED & Photo IC

Applications •IntelligentPowerModuleSignalIsolation •FactoryAutomation(FA) •IndustrialInverters General TheTLP2719consistsofahigh-outputinfraredLEDcoupledwithahigh-gain,high-speedphotodetector.Itis housedintheSO6Lpackage. Thisproductcanbemountedonthesa

TLP2719(D4-LF4,E

包装：卷带（TR） 类别：隔离器 光隔离器 - 逻辑输出 描述：OPTOCOUPLER SO6

Toshiba Semiconductor and Storage

TLP2719(D4-TP,E

包装：卷带（TR） 类别：隔离器 光隔离器 - 逻辑输出 描述：OPTOCOUPLER SO6

Toshiba Semiconductor and Storage

TLP2719(D4-TP4,E

包装：卷带（TR） 类别：隔离器 光隔离器 - 逻辑输出 描述：OPTOCOUPLER SO6

Toshiba Semiconductor and Storage

TZ2719A

CrystalUnitSMD2.5x2.026.0MHz

Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage DescriptionandApplications: Surfacemount2.5mmx2.0mmcrystalunitforuseinwirelesscommunicationsdevices, especiallyforan

TZ2719B

CrystalUnitSMD2.5x2.026.00MHz

Features: SurfaceMountHermeticPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature UltraMiniaturePackage MoistureSensitivityLevel(MSL):Level-1 DescriptionandApplications: Surfacemount2.5mmx2.0mmcrystalunitforuseinwireless

UPA2719AGR

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION TheμPA2719AGRisP-ChannelMOSFieldEffect Transistordesignedforpowermanagementapplicationsof notebookcomputersandLithium-Ionbatteryprotection circuit. FEATURES •Lowon-stateresistance RDS(on)1=13mΩMAX.(VGS=−10V,ID=−5.0A) RDS(on)2=20.9mΩMAX.(VGS

UPA2719GR

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION TheμPA2719GRisP-ChannelMOSFieldEffectTransistor designedforpowermanagementapplicationsofnotebook computersandLi-ionbatteryprotectioncircuit. FEATURES •Lowon-stateresistance RDS(on)1=13mΩMAX.(VGS=−10V,ID=−5.0A) RDS(on)2=20.9mΩMAX.(VGS=−4.5

UPA2719GR

SWITCHINGP-CHANNELPOWERMOSFET