TC6501

UltraSmallTemperatureSwitcheswithPinSelectableHysteresis

GeneralDescription TheTC6501/2/3/4areSOT-23temperatureswitchesthatrequirenoexternalcomponentsandareavailablewithfactory-programmedtemperaturethresholds.Achoiceoffactory-trimmedtemperaturetrippointsarealsoavailable.Pin-selectablehysteresisof+2°Cor+10°Callowsflex

TDA6501

5Vmixer/oscillatorandsynthesizerforPALandNTSCstandards

TDA6501TT

5Vmixer/oscillatorandsynthesizerforPALandNTSCstandards

TDA6501TT

5Vmixer/oscillatorandsynthesizerforPALandNTSCstandards

TFDS6501E

FastInfraredTransceiverModuleFamily(FIR,4Mbit/s)for2.6Vto5.5VOperation

TFDT6501E

FastInfraredTransceiverModuleFamily(FIR,4Mbit/s)for2.6Vto5.5VOperation

THN6501

NPNSiGeRFTRANSISTOR

□Features oLowNoiseFigure NF=1.0dBTyp.@f=1GHz,VCE=3V,IC=7mA oHighPowerGain MAG=15dBTyp.@f=1GHz,VCE=3V,IC=7mA oHighTransitionFrequency fT=9GHzTyp.@VCE=3V,IC=30mA □Application LNAandwidebandamplifieruptoGHzrange

THN6501E

NPNSiGeRFTRANSISTOR

□Features oLowNoiseFigure NF=1.0dBTyp.@f=1GHz,VCE=3V,IC=7mA oHighPowerGain MAG=15dBTyp.@f=1GHz,VCE=3V,IC=7mA oHighTransitionFrequency fT=9GHzTyp.@VCE=3V,IC=30mA □Application LNAandwidebandamplifieruptoGHzrange

THN6501E

SiGeNPNTransistor

□Features oLowNoiseFigure NF=1.0dBatf=1GHz,VCE=3V,IC=7mA oHighPowerGain MAG=15dBatf=1GHz,VCE=3V,IC=7mA oHighTransitionFrequency fT=9GHzatVCE=3V,IC=30mA □Application LNAandwidebandamplifieruptoGHzrange

THN6501F

SiGeNPNTransistor

□Features oLowNoiseFigure NF=1.0dBatf=1GHz,VCE=3V,IC=7mA oHighGain MAG=11.5dBatf=1GHz,VCE=10V,IC=20mA oHighTransitionFrequency fT=7GHzatf=1GHz,VCE=10V,IC=30mA □Application LNAandwidebandamplifieruptoGHzrange